
dsPIC30F3014/4013
DS70138G-page 180
2010 Microchip Technology Inc.
23.2
AC Characteristics and Timing Parameters
The information contained in this section defines dsPIC30F AC characteristics and timing parameters.
TABLE 23-11: ELECTRICAL CHARACTERISTICS: BOR
DC CHARACTERISTICS
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
-40°C
TA +85°C for Industrial
-40°C
TA +125°C for Extended
Param
No.
Symbol
Characteristic
Min
Typ(1)
Max
Units
Conditions
BO10
VBOR
BOR Voltage on VDD
Transition
High-to-Low(2)
BORV = 11(3)
—
V
Not in operating
range
BORV = 10
2.6
—
2.71
V
BORV = 01
4.1
—
4.4
V
BORV = 00
4.58
—
4.73
V
BO15
VBHYS
—5
—
mV
Note 1:
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
2:
These parameters are characterized but not tested in manufacturing.
3:
‘11’ values not in usable operating range.
TABLE 23-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
DC CHARACTERISTICS
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
-40°C
TA +85°C for Industrial
-40°C
TA +125°C for Extended
Param
No.
Symbol
Characteristic
Min
Typ(1)
Max
Units
Conditions
Data EEPROM Memory(2)
D120
ED
Byte Endurance
100K
1M
—
E/W
-40
C TA +85°C
D121
VDRW
VDD for Read/Write
VMIN
—
5.5
V
Using EECON to read/write
VMIN = Minimum operating
voltage
D122
TDEW
Erase/Write Cycle Time
0.8
2
2.6
ms
RTSP
D123
TRETD
Characteristic Retention
40
100
—
Year
Provided no other specifications
are violated
D124
IDEW
IDD During Programming
—
10
30
mA
Row Erase
Program Flash Memory(2)
D130
EP
Cell Endurance
10K
100K
—
E/W
-40
C TA +85°C
D131
VPR
VDD for Read
VMIN
—5.5
V
VMIN = Minimum operating
voltage
D132
VEB
VDD for Bulk Erase
4.5
—
5.5
V
D133
VPEW
VDD for Erase/Write
3.0
—
5.5
V
D134
TPEW
Erase/Write Cycle Time
0.8
2
2.6
ms
RTSP
D135
TRETD
Characteristic Retention
40
100
—
Year
Provided no other specifications
are violated
D137
IPEW
IDD During Programming
—
10
30
mA
Row Erase
D138
IEB
IDD During Programming
—
10
30
mA
Bulk Erase
Note 1:
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
2:
These parameters are characterized but not tested in manufacturing.